* Order code VDS SCTH35N65G2V-7 650 V
* Very fast and robust intrinsic body diode
* Low capacitance Applications
* Switching mode power supply
* EV chargers
* DC-DC converters RDS(on) typ. 55 mΩ ID 45 A Gate (1) Driver source (2) Power source (3, 4, 5,
SCTH35N65G2V-7 Datasheet (613.37 KB)
SCTH35N65G2V-7
613.37 KB
Silicon carbide power mosfet.
SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Featur.
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