SCTH40N120G2V-7 - Silicon carbide Power MOSFET

Product Overview

STMicroelectronics

Part number	SCTH40N120G2V-7
Manufacturer	STMicroelectronics
File Size	364.24 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTH40N120G2V-7 Datasheet
Additional preview pages of the SCTH40N120G2V-7 datasheet.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Order code VDS RDS(on) max. ID SCTH40N120G2V-7 1200 V 100 mΩ 36 A.
Very high operating junction temperature capability (TJ = 175 °C).
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source Kelvin pin for increased efficiency Gate (1) Driver source (2) Drain (TAB).

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Published: Jun 26, 2023 |