SCTH40N120G2V-7 Key Features
- Very high operating junction temperature capability (TJ = 175 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Source Kelvin pin for increased efficiency
| Part Number | Description |
|---|---|
| SCTH40N120G2V7AG | Automotive-grade silicon carbide Power MOSFET |
| SCTH100N120G2-AG | Automotive-grade silicon carbide Power MOSFET |
| SCTH100N65G2-7AG | Automotive-grade silicon carbide Power MOSFET |
| SCTH35N65G2V-7 | Silicon carbide Power MOSFET |
| SCTH35N65G2V-7AG | Automotive-grade silicon carbide Power MOSFET |