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SCTHS250N65G3 - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number: SCTHS250N65G3
Manufacturer: STMicroelectronics ↗
File Size: 568.29 KB
Datasheet: SCTHS250N65G3-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

SCTHS250N65G3 Product details

Description

This silicon carbide Power.

Features

Order codes VDS RDS(on) typ. ID 23 SCTHS250N65G3AG 650 V 6.7 mΩ 237 A SCTHS250N65G3TAG 1.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency Application.
Main inverter (electric traction) NG3DS2PS1D4 Descr.

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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