STMicroelectronics SCTHS250N65G2G
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTHS250N65G2G |
|---|---|
| Datasheet | SCTHS250N65G2G Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code 23 SCTHS250N65G2G VDS 650 V RDS(on) typ. 8.0 mΩ ID 250 A● AEC-Q101 qualified 1
● Very fast and robust intrinsic body diode
● Extremely low gate charge and input capacitance
● Source sensing pin for increased efficiency
APPLICATIONS
● Main inverter (electric traction)● DC/DC converter for EV/HEV NG3DS2PS1D4
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTHS250N65G2G Product summary Order code SCTHS250N65G2G Marking SCHS250N65G2 Package STPAK Packing Tray DS14295 - Rev 1 - April 2023 For further information contact your local STMicroelectronics sales office. SCTHS250N65G2G Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage VGS Gate-source voltage (recommended operating values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C ID(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C VISO Insul...
