Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
Features
- Order codes
VDS
RDS(on) typ. ID
23
SCTHS250N65G3AG
650 V
6.7 mΩ
237 A
SCTHS250N65G3TAG
1.
- AEC-Q101 qualified.
- Very low RDS(on) over the entire temperature range.
- High speed switching performances.
- Very fast and robust intrinsic body diode.
- Very high operating junction temperature capability (TJ = 200 °C).
- Source sensing pin for increased efficiency.
SCTHS250N65G3 Datasheet
