STMicroelectronics SCTHS250N65G3
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCTHS250N65G3 |
|---|---|
| Datasheet | SCTHS250N65G3 Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS RDS(on) typ. ID 23 SCTHS250N65G3AG 650 V 6.7 mΩ 237 A SCTHS250N65G3TAG 1● AEC-Q101 qualified
● Very low RDS(on) over the entire temperature range
● High speed switching performances
● Very fast and robust intrinsic body diode
● Very high operating junction temperature capability (TJ = 200 °C)
● Source sensing pin for increased efficiency Application
● Main inverter (electric traction) NG3DS2PS1D4
DESCRIPTION
Product status link SCTHS250N65G3 Product summary Order code SCTHS250N65G3AG Marking S25N65G3PAG Package STPAK Packing Tray Order code SCTHS250N65G3TAG Marking S25N65G3PAG Package STPAK Packing Tube DS14058 - Rev 3 - July 2023 For further information contact your local STMicroelectronics sales office. SCTHS250N65G3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Drain current (continuous) at TC = 25 °C ID Drain curr...
