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SOC2222AHR - 0.8A NPN transistor

General Description

The SOC2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).

Key Features

  • Vceo 50 V IC(max. ) 0.8 A HFE at 10 V, 150 mA > 100 Tj(max. ) 200 °C.
  • Hermetic packages.
  • ESCC qualified.
  • 100 krad.

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SOC2222AHR Datasheet Rad-Hard 50 V, 0.8 A NPN transistor 3 1 2 LCC-3 C (3) (2) B E (1) DS10450 Product status link SOC2222AHR Features Vceo 50 V IC(max.) 0.8 A HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C • Hermetic packages • ESCC qualified • 100 krad Description The SOC2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/002 specification and available in LCC-3 hermetic package, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.