Download SOC2222AHR Datasheet PDF
STMicroelectronics
SOC2222AHR
SOC2222AHR is 0.8A NPN transistor manufactured by STMicroelectronics.
Features Vceo 50 V IC(max.) 0.8 A HFE at 10 V, 150 m A > 100 Tj(max.) 200 °C - Hermetic packages - ESCC qualified - 100 krad Description The SOC2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/002 specification and available in LCC-3 hermetic package, it is specifically remended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part-number SOC2222ARHRx SOC2222AHRx Product summary Qualification system Agency specification ESCC Flight 5201/002 ESCC Flight 5201/002 Note: See Table 6 for ordering information. Package LCC-3 LCC-3 Radiation level 100 krad - DS14749 - Rev 1 - September 2024 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Symbol VCBO VCEO VEBO IC Table 1. Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current PTOT Total dissipation at Tamb ≤ 25...