ST13009
Features
- Low spread of dynamic parameters
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
Applications
- Switch mode power supplies
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds.
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking (1)
Package
Packaging
13009 L 13009 H
TO-220
Tube
1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
June 2009
Doc ID 11491 Rev 3
1/11
.st.
Contents
Contents
1 Electrical ratings
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