Datasheet Summary
Memory Card IC 2 Kbit (256 x 8) Serial I2C Bus EEPROM s s s s s
Single Supply Voltage (3 V to 5.5 V) Two Wire I2C Serial Interface BYTE and MULTBYTE WRITE (up to 4 Bytes) PAGE WRITE (up to 8 Bytes) BYTE, RANDOM and SEQUENTIAL READ Modes Self-Timed Programming Cycle
2 2 2 2 s s s s s
Automatic Address Incrementing Enhanced ESD/Latch-Up Behavior 1 Million Erase/Write Cycles (minimum) 10 Year Data Retention (minimum)
Micromodule (D15) Micromodule (D20)
DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one...