ST2009DHI Datasheet - ST Microelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST2009DHI General Description

The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =35 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T.

ST2009DHI Datasheet (260.27 KB)

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ST2009DHI

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STMicroelectronics ↗

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260.27 KB

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High voltage fast-switching npn power transistor.
® ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIAN.

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ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics

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ST2009DHI General Description

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