STB12NM50N Description
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. 4 2.1 (curves) ............................
STB12NM50N Key Features
- VDSS (@Tjmax) 550V 550V 550V 550V