STB155N3H6 mosfet equivalent, n-channel mosfet.
Order codes STB155N3H6 STD155N3H6
VDSS 30 V 30 V
RDS(on) max < 3 mΩ < 3 mΩ
ID 80 A (1) 80 A (1)
1. Limited by wire bonding
* RDS(on) * Qg industry benchmark
* Automotive
Description
These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ V.
These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
3 1
DPAK
3 1
D²PAK
Figure 1. Internal schematic diagram
D (TAB or 2)
G(.
Image gallery
Download