STB155N3LH6 Datasheet, STMicroelectronics

Order codes STB155N3LH6 STD155N3LH6 VDSS 30 V RDS(on) max 3.0 mΩ 1. Current limited by package
* 100% avalanche tested
* Logic level drive ID(1) PTOT 80 A 1.

* Switching applications
* Automotive Description These devices are N-channel Power MOSFETs developed using the.

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1.