STB155N3H6 Description
These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK 3 1 D²PAK Figure.
STB155N3H6 Key Features
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Switching