STMicroelectronics STB155N3H6
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.| Part No. | STB155N3H6 |
|---|---|
| Datasheet | STB155N3H6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STB155N3H6 STD155N3H6 VDSS 30 V 30 V RDS(on) max < 3 mΩ < 3 mΩ ID 80 A (1) 80 A (1) 1. Limited by wire bonding● RDS(on) * Qg industry benchmark
● Extremely low on-resistance RDS(on)
● High avalanche ruggedness Application
● Switching applications
● Automotive
DESCRIPTION
These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order codes STB155N3H6 STD155N3H6 Marking 155N3H6 S(3) AM01474v1 Package D²PAK DPAK Packaging Tape and reel May 2011 Doc ID 018793 Rev 2 1/ 18 Contents Contents STB155N3H6, STD155N3H6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
