STB155N3LH6 Datasheet | STMicroelectronics

STB155N3LH6 STD155N3LH6 N-channel 30 V, 2.4 mΩ , 80 A, D²PAK, DPAK STripFET™VI DeepGATE™ Power MOSFET Features Order codes STB155N3LH6 STD155N3LH6 VDSS 30 V RDS(on) max 3.0 mΩ 1. Current limited by package - 100% avalanche tested - Logic level drive ID(1) PTOT 80 A 110 W Applications - Switching applications - Automotive Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. 3 1 D²PAK 3 1 DPAK Figure 1. Internal schematic diagram $4!"OR ' Table 1. Device summary Order codes STB155N3LH6...