STMicroelectronics STB155N3LH6
The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.| Part No. | STB155N3LH6 |
|---|---|
| Datasheet | STB155N3LH6 Download |
| Manufacturer |  STMicroelectronics |
| Description | 30V 80A N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STB155N3LH6 STD155N3LH6 VDSS 30 V RDS(on) max 3.0 mΩ 1. Current limited by package● 100% avalanche tested
● Logic level drive ID(1) PTOT 80 A 110 W
APPLICATIONS
● Switching applications● Automotive
DESCRIPTION
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram $ 4!" OR ' Table 1. Device summary Order codes STB155N3LH6 STD155N3LH6 Marking 155N3LH6 3 !- V Package D2PAK DPAK Packaging Tape and reel September 2011 Doc ID 17893 Rev 3 1/18 18 Contents Contents STB155N3LH6, STD155N3LH6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
