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STB18N60DM2 - N-channel Power MOSFET

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

Features

  • Order code VDS RDS(on) max. STB18N60DM2 600 V 0.295 Ω.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 12 A.

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Datasheet Details

Part number STB18N60DM2
Manufacturer STMicroelectronics
File Size 632.34 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB18N60DM2 Datasheet
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STB18N60DM2 Datasheet N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. STB18N60DM2 600 V 0.295 Ω • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 12 A Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
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