900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STB18N60DM2 Datasheet

N-channel Power MOSFET

No Preview Available !

STB18N60DM2
Datasheet
N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK
package
TAB
2
3
1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
VDS
RDS(on) max.
STB18N60DM2
600 V
0.295 Ω
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
ID
12 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-
recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined
with low RDS(on), rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status links
STB18N60DM2
Product summary
Order code
STB18N60DM2
Marking
18N60DM2
Package
D²PAK
Packing
Tape and reel
DS10962 - Rev 4 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STB18N60DM2 Datasheet

N-channel Power MOSFET

No Preview Available !

1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at Tcase = 25 °C
ID Drain current (continuous) at Tcase= 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at Tcase = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 12, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol
IAR
EAR
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
STB18N60DM2
Electrical ratings
Value
±25
12
7.6
48
110
40
50
–55 to 150
Unit
V
A
A
A
W
V/ns
°C
°C
Value
1.14
30
Unit
°C/W
Value
2.5
380
Unit
A
mJ
DS10962 - Rev 4
page 2/16


Part Number STB18N60DM2
Description N-channel Power MOSFET
Maker STMicroelectronics
PDF Download

STB18N60DM2 Datasheet PDF






Similar Datasheet

1 STB18N60DM2 N-channel Power MOSFET
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy