STB18N60DM2
Overview
- 295 Ω
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected ID 12 A
| Part | STB18N60DM2 |
|---|---|
| Description | N-channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | STMicroelectronics |
| Size | 632.34 KB |
Related Datasheets
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