STB18N60DM2 Datasheet - STMicroelectronics

N-channel Power MOSFET

STB18N60DM2 Features

* Order code VDS RDS(on) max. STB18N60DM2 600 V 0.295 Ω

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected ID 12 A Applicat

STB18N60DM2 General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift.

STB18N60DM2 Datasheet (632.34 KB)

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Datasheet Details

Part number:

STB18N60DM2

Manufacturer:

STMicroelectronics ↗

File Size:

632.34 KB

Description:

N-channel power mosfet.
STB18N60DM2 Datasheet N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 .

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STB18N60DM2 Features

STB18N60DM2 General Description

Datasheet Details

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Description:

STB18N60DM2 Distributor