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STB18N60M6 - N-CHANNEL POWER MOSFET

General Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

Key Features

  • Order code VDS RDS(on) max. STB18N60M6 600 V 280 mΩ.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected ID 13 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB18N60M6 Datasheet N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. STB18N60M6 600 V 280 mΩ • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected ID 13 A Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.