STMicroelectronics STB18N60M6
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.| Part No. | STB18N60M6 |
|---|---|
| Datasheet | STB18N60M6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 600V 13A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STB18N60M6 600 V 280 mΩ 13 A● Reduced switching losses
● Lower RDS(on) per area vs previous generation
● Low gate input resistance
● 100% avalanche tested
● Zener-protected
APPLICATIONS
G(1)● Switching applications
● LLC converters
● Boost PFC converters S(3)
DESCRIPTION
AM01476v1_tab STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STB18N60M6 Product summary Order code STB18N60M6 Marking 18N60M6 Package D²PAK Packing Tape and reel DS12842 - Rev 3 - July 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID Drain c...
