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STB18N60DM2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB18N60DM2 Datasheet N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3).

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status links STB18N60DM2 Product summary Order code STB18N60DM2 Marking 18N60DM2 Package D²PAK Packing Tape and reel DS10962 - Rev 4 - June 2019 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code VDS RDS(on) max. STB18N60DM2 600 V 0.295 Ω.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 12 A.

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STB18N60DM2 Distributor