Part STB18N60DM2
Description N-channel Power MOSFET
Category MOSFET
Manufacturer STMicroelectronics
Size 632.34 KB
Pricing from 3.82 USD, available from Newark and Arrow Electronics.
STMicroelectronics

STB18N60DM2 Overview

Key Specifications

Package: D2PAK
Mount Type: Surface Mount
Pins: 3
Height: 4.83 mm

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Key Features

  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness

Price & Availability

Seller Inventory Price Breaks Buy
Newark 1635 1+ : 3.82 USD
10+ : 2.66 USD
25+ : 2.44 USD
50+ : 2.23 USD
View Offer
Arrow Electronics 8000 1000+ : 1.0418 USD View Offer