STB18N60DM2
STB18N60DM2 is N-channel Power MOSFET manufactured by STMicroelectronics.
N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
RDS(on) max.
600 V
0.295 Ω
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
ID 12 A
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high-efficiency...
