STB18N60M6 Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STB18N60M6 Features

* Order code VDS RDS(on) max. STB18N60M6 600 V 280 mΩ

* Reduced switching losses

* Lower RDS(on) per area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected ID 13 A Applications

* Switching applications

STB18N60M6 General Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one.

STB18N60M6 Datasheet (608.61 KB)

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Datasheet Details

Part number:

STB18N60M6

Manufacturer:

STMicroelectronics ↗

File Size:

608.61 KB

Description:

N-channel power mosfet.
STB18N60M6 Datasheet N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 .

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STB18N60M6 Features

STB18N60M6 General Description

Datasheet Details

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