Datasheet Details
| Part number | STB20NE06 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 149.53 KB |
| Description | N-CHANNEL POWER MOSFET |
| Download | STB20NE06 Download (PDF) |
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| Part number | STB20NE06 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 149.53 KB |
| Description | N-CHANNEL POWER MOSFET |
| Download | STB20NE06 Download (PDF) |
|
|
|
This Power Mosfet is the latest development of STMicroelectronis unique ”Single
www.DataSheet4U.com ® STB20NE06 N - CHANNEL 60V - 0.06Ω - 20A D2PAK STripFET™ POWER MOSFET TYPE STB20NE06 s s s s s V DSS 60 V R DS(on) < 0.080 Ω ID 20 A s TYPICAL RDS(on) = 0.06 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt Ts tg Tj June 1999 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature o o o Value 60 60 ± 20 20 14 80 70 0.47 7 -65 to 175 175 ( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C 1/8 (•) Pulse width limited by safe operating area www.DataSheet4U.com www.DataSheet4U.
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