STB20NK50Z-S, STB20NK50Z Datasheet - ST Microelectronics

STB20NK50Z-S N-CHANNEL POWER MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripINTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout. In addition to pushing www.DataSheet4U.com on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most d.

www.DataSheet4U.com STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STB20NK50Z STB20NK50Z-S STP20NK50Z STW20NK50Z s s s VDSS 500 500 500 500 V V V V RDS(on) < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 17 17 17 17 A A A A Pw 190 190 190 190 W W W W 1 3 2 1 2 3 s s TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY .

STB20NK50Z-S Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STB20NK50Z_STMicroelectronics.pdf