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STB20NK50Z-S Datasheet N-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

Download the STB20NK50Z-S datasheet PDF. This datasheet also includes the STB20NK50Z variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STB20NK50Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripINTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout.

In addition to pushing www.DataSheet4U.com on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Overview

www.DataSheet4U.com STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STB20NK50Z STB20NK50Z-S STP20NK50Z STW20NK50Z s s s VDSS 500 500 500 500 V V V V RDS(on) < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 17 17 17 17 A A A A Pw 190 190 190 190 W W W W 1 3 2 1 2 3 s s TYPICAL RDS(on) = 0.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 www. DataS.

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