Type VDSS RDS(on) max ID PW STB20NK50Z 500 V < 0.27 Ω 17 A 190 W ct(s)
* Extremely high dv/dt capability du
* 100% avalanche tested ro
* Gate charge mi.

t(s) - Description c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ Su.

c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout. In te addition to a significant reduc.

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