STB23N80K5 Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
- Part: STB23N80K5
- Manufacturer: STMicroelectronics (official site)
- Size: 462.57 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STB23NM50N | N-channel Power MOSFET |
| STB23NM60N | N-channel Power MOSFET |
| STB23NM60ND | N-channel Power MOSFET |
| STB200N04 | Power MOSFET |
| STB200N4F3 | N-channel Power MOSFET |
STB23N80K5 Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 1 Electrical ratings Table.