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STB23N80K5 Datasheet - STMicroelectronics

STB23N80K5 N-Channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product st.

STB23N80K5 Features

* Order code VDS RDS(on) max. ID STB23N80K5 800 V 0.28 Ω 16 A

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected PTOT 190 W Applications

* Switching appl

STB23N80K5 Datasheet (462.57 KB)