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STB24NM60N - Power MOSFET

Datasheet Summary

Description

These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes STB24NM60N.
  • VDSS (@Tjmax) 650 V RDS(on) max. < 0.19 Ω ID 17 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 D²PAK.

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STB24NM60N N-channel 600 V, 0.168 Ω , 17 A MDmesh™ II Power MOSFET D²PAK Features Order codes STB24NM60N ■ ■ ■ VDSS (@Tjmax) 650 V RDS(on) max. < 0.19 Ω ID 17 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 D²PAK Application Switching applications Description These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converter. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1.
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