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STMicroelectronics Electronic Components Datasheet

STB24NM60N Datasheet

Power MOSFET

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STB24NM60N
N-channel 600 V, 0.168 typ., 17 A MDmesh™ II Power MOSFET
in a D²PAK package
Datasheet production data
Features
TAB
3
1
D2PAK
Order code VDS @Tjmax RDS(on) max. ID
STB24NM60N 650 V
0.19
17 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Figure 1. Internal schematic diagram
' RU7$%
* 
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6 
$0Y
Order code
STB24NM60N
Table 1. Device summary
Marking
Packages
24NM60N
D2PAK
Packaging
Tape and reel
July 2014
This is information on a product in full production.
DocID018484 Rev 2
1/14
www.st.com


STMicroelectronics Electronic Components Datasheet

STB24NM60N Datasheet

Power MOSFET

No Preview Available !

Contents
Contents
STB24NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 DocID018484 Rev 2


Part Number STB24NM60N
Description Power MOSFET
Maker STMicroelectronics
PDF Download

STB24NM60N Datasheet PDF






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