STB24NM65N
Overview
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
- Limited only by maximum temperature allowed * *
- 2 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP TO-247 Figure
- Internal schematic diagram
