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STB24NM60N - N-Channel MOSFET

Datasheet Summary

Features

  • With To-263(D2PAK) package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STB24NM60N

Datasheet Details

Part number STB24NM60N
Manufacturer INCHANGE
File Size 199.59 KB
Description N-Channel MOSFET
Datasheet download datasheet STB24NM60N Datasheet
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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB24NM60N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±30 17 11 68 PD Total Dissipation @TC=25℃ 125 Tch Max.
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