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STB24NM65N - N-Channel MOSFET

Datasheet Summary

Description

Low Drain-Source On-Resistance APPLICATIONS

Max.

Features

  • Drain Current.
  • ID= 19A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STB24NM65N

Datasheet Details

Part number STB24NM65N
Manufacturer INCHANGE
File Size 265.26 KB
Description N-Channel MOSFET
Datasheet download datasheet STB24NM65N Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
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