| Part Number | STB24NM65N |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of . www.DataSheet4U.com Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 3 STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N 19 A 19 A 19 A(1) 19 A 19 A 1 2 3 12 TO-220 3 1 I²PAK D²PAK 3 1 2 1. Limited only by maximum temperatu. |
STB24NM65N Datasheet
The STB24NM65N is a N-channel Power MOSFET.
| Part Number | STB24NM65N |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Cu.
*Drain Current *ID= 19A@ TC=25℃ *Drain Source Voltage- : VDSS= 650V(Min) *Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Low Drain-Source On-Resistance APPLICATIONS *Sw. |