STB24NM60N
Overview
These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
- VDSS (@Tjmax) 650 V RDS(on) max. < 0.19 Ω ID 17 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 D²PAK
