STMicroelectronics STB24NM60N
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converter.| Part No. | STB24NM60N |
|---|---|
| Datasheet | STB24NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STB24NM60N●
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● VDSS (@Tjmax) 650 V RDS(on) max. < 0.19 Ω ID 17 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 D²PAK Application Switching applications
DESCRIPTION
These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. Figure 1. Internal schematic diagram $ ' 3 !- V Table 1. Device summary Marking 24NM60N Package D²PAK Packaging Tape and reel Order codes STB24NM60N February 2011 Doc ID 010008 Rev 1 1/15 15 Contents STB24NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
