STB24NM60N Datasheet

The STB24NM60N is a Power MOSFET.

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Part NumberSTB24NM60N
ManufacturerSTMicroelectronics
Overview These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout. Order codes STB24NM60N
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* VDSS (@Tjmax) 650 V RDS(on) max. < 0.19 Ω ID 17 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 D²PAK Application Switching applications Description These N-channel 600 V Power MOSFET devices are made using the second ge.
Part NumberSTB24NM60N
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB24NM60N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Mini.
*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .