STB25NM60N-1 Overview
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. Internal schematic diagram Table.
STB25NM60N-1 Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Switching