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STB28N60M2 Datasheet N-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

General Description

These devices are N-channel Power MOSFETs G(1) developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

S(3) AM15572V1 Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 Table 1: Device summary Marking Package D²PAK 2

Overview

STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 Ω typ.

Key Features

  • Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS @ TJmax 650 V RDS(on) max. 0.150 Ω ID 22 A Figure 1: Internal schematic diagram D (2 TAB ).
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.