STB4N62K3 Key Features
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery
- Zener-protected
- Part: STB4N62K3
- Manufacturer: STMicroelectronics (official site)
- Size: 1.21 MB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STB4NK60Z | N-Channle MOSFET |
| STB45N10L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB45NF06 | N-CHANNEL POWER MOSFET |
| STB45NF06L | N-CHANNEL POWER MOSFET |
| STB45NF3LL | N-CHANNEL POWER MOSFET |
STB4N62K3 Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, bined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Order code STB4N62K3 STD4N62K3 Table.