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STB4N62K3 - N-Channel Power MOSFET

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram D(2,TAB) Order codes STB4N62K3 STD4N62K3 VDS RDS(on) max. ID 620 V 2Ω 3.8 A PW 70 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Full PDF Text Transcription for STB4N62K3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STB4N62K3. For precise diagrams, tables, and layout, please refer to the original PDF.

STB4N62K3, STD4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3™ Power MOSFETs in D²PAK and DPAK ...

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packages Datasheet - production data Features TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram D(2,TAB) Order codes STB4N62K3 STD4N62K3 VDS RDS(on) max. ID 620 V 2Ω 3.8 A PW 70 W • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.