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STB5NB60 - N-CHANNEL POWER MOSFET

Description

Using the latest high voltage MESH OVERLAY™ I2PAK D2PAK process, STMicroelectronics has designed an TO-262 TO-263 advanced family of power MOSFETs with (Suffix ”T4”) (suffix ”-1”) outstanding performances.

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www.DataSheet4U.com ® STB5NB60 N - CHANNEL 600V - 1.8Ω - 5A - I2PAK/D2PAK PowerMESH™ MOSFET TYPE ST B5NB60 s s s s s V DSS 600 V R DS(on) < 2.0 Ω ID 5 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 12 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ I2PAK D2PAK process, STMicroelectronics has designed an TO-262 TO-263 advanced family of power MOSFETs with (Suffix ”T4”) (suffix ”-1”) outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics.
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