Datasheet Details
| Part number | STB5NB80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 280.99 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STB5NB80_STMicroelectronics.pdf |
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Overview: www.DataSheet4U.com ® STB5NB80 N - CHANNEL 800V - 1.8Ω - 5A - D2PAK PowerMESH™ MOSFET TYPE ST B5NB80 s s s s s s V DSS 800 V R DS(on) < 2.
| Part number | STB5NB80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 280.99 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STB5NB80_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the INTERNAL SCHEMATIC DIAGRAM lowest RDS(on) per area, exceptional avalanche DataSheet4U.com and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING s EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1) T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at T c = 25 oC Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max.
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