STB5NB80 Datasheet | STMicroelectronics

TION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the INTERNAL SCHEMATIC DIAGRAM lowest RDS(on) per area, exceptional avalanche . and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING s EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( - ) P tot dv/dt( 1) T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at T c = 25 o C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction T emperature o o TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 Data Shee Value 800 800 ± 30 5 3.2 20 110 0.88 4 -65 to 150 150 Unit V V V A A A W W/ C V/ns o o o (- ) Limited only by maximum temperature allowed ( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX March 1999 1/8 . . Data Sheet 4 U . .. THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1.13 62.5 0.5 300 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) Min. Value Max. Value 5 300 Unit A m J ELECTRICAL CHARACTERISTICS (Tcase = 25 o...