STB5NB60 Overview
Using the latest high voltage MESH OVERLAY™ I2PAK D2PAK process, STMicroelectronics has designed an TO-262 TO-263 advanced family of power MOSFETs with (Suffix ”T4”) (suffix ”-1”) outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge...