Datasheet4U Logo Datasheet4U.com

STB5NC50 - N-CHANNEL POWER MOSFET

Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB5NC70Z N-CHANNEL MOSFET STMicroelectronics
STB5NC70Z-1 N-CHANNEL MOSFET STMicroelectronics
STB5N62K3 N-channel MOSFET STMicroelectronics
STB5N80K5 N-CHANNEL POWER MOSFET STMicroelectronics
STB5NK52ZD-1 N-Channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STB5NC50-1 N-CHANNEL POWER MOSFET
STB5NC70Z N-CHANNEL POWER MOSFET
STB5NC70Z-1 N-CHANNEL POWER MOSFET
STB5NC90Z N-CHANNEL POWER MOSFET
STB5NC90Z-1 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 s s s s s VDSS 500 V 500 V 500 V 500 V RDS(on) < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω ID 5.5A 5.5A 5.5A 5.5A 3 1 TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 D2PAK TO-220FP 3 12 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. I2PAK INTERNAL SCHEMATIC DIAGRAM DataSheet4U.
Published: |