STB6NB50 Datasheet - ST Microelectronics

N-CHANNEL Power MOSFET

STB6NB50 General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona.

STB6NB50 Datasheet (92.76 KB)

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STB6NB50

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STMicroelectronics ↗

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92.76 KB

Description:

N-channel power mosfet.
® STB6NB50 N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAK PowerMESH™ MOSFET TYPE ST B6NB50 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 5.8 A TYPICA.

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STB6NB50 N-CHANNEL Power MOSFET ST Microelectronics

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STB6NB50 General Description

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