Datasheet4U Logo Datasheet4U.com

STB6N80K5 - N-channel Power MOSFET

General Description

technology based on an innovative proprietary vertical structure.

Key Features

  • Order code VDS STB6N80K5 800 V.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Other Datasheets by STMicroelectronics

Part Number Description
STB6N60M2 N-channel Power MOSFET
STB6N62K3 N-channel Power MOSFET
STB6N65M2 N-channel Power MOSFET
STB6NC60-1 N-CHANNEL MOSFET
STB6NC80Z N-CHANNEL MOSFET
STB6NC80Z-1 N-CHANNEL MOSFET
STB6NK90Z N-channel Power MOSFET
STB6NK90ZT4 N-channel Power MOSFET
STB6NM60N N-channel Power MOSFET
STB60N55F3 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB6N80K5 Datasheet N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh K5 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS STB6N80K5 800 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications RDS(on) max. 1.6 Ω ID 4.5 A • Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) technology based on an innovative proprietary vertical structure. The result is a AM01476v1_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.