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STB6NC80Z Datasheet PDF

STMicroelectronics STB6NC80Z

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Part No. STB6NC80Z
Datasheet STB6NC80Z Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
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STB6NC80Z datasheet page 1 preview

DESCRIPTION

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

APPLICATIONS

SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s I²PAK (Tabless TO-220)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (q ) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature .(*)Pulse Value STP(B)6NC80Z(-1) 800 800 ± 25 5.4 3.4 21 125 1 ±50 3 3 -–65 to 150 150 2000 5.4(*) 3.4(*) 21(*) 40 0.32 STP6NC80ZFP Unit V V V A A A W W/°C mA KV V/ns V °C °C (●)Pulse width l...
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