STB6NC80Z - N-CHANNEL MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STB6NC80Z
Manufacturer	STMicroelectronics
File Size	442.23 KB
Description	N-CHANNEL MOSFET
Datasheet	STB6NC80Z Datasheet
Additional preview pages of the STB6NC80Z datasheet.

Product details

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 STP6NC80Z.

📁 Similar Datasheet

STB6NA60 - N-CHANNEL Power MOSFET (ST Microelectronics)
STB6NA80 - N-CHANNEL Power MOSFET (ST Microelectronics)
STB6NB50 - N-CHANNEL Power MOSFET (ST Microelectronics)
STB6NB90 - N-CHANNEL Power MOSFET (ST Microelectronics)
STB6NK60Z - N-CHANNEL Power MOSFET (ST Microelectronics)
STB6NK60Z-1 - N-CHANNEL Power MOSFET (ST Microelectronics)
STB6000 - N-CHANNEL Power MOSFET (ST Microelectronics)
STB6010 - SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (EIC)

Other Datasheets by STMicroelectronics

STB6NC80Z-1 - N-CHANNEL MOSFET
STB6NC60-1 - N-CHANNEL MOSFET
STB6N60M2 - N-channel Power MOSFET
STB6N62K3 - N-channel Power MOSFET
STB6N65M2 - N-channel Power MOSFET
STB6N80K5 - N-channel Power MOSFET

Published: Nov 5, 2008 |