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STB6NC60-1 - N-CHANNEL MOSFET

General Description

t(sThe PowerMESH™II is the evolution of the first cgeneration of MESH OVERLAY™.

area dfigure of merit while keeping the device at the leadroing edge for what concerns swithing speed, gate Pcharge and ruggedness.

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STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH™II MOSFET TYPE VDSS RDS(on) ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A s TYPICAL RDS(on) = 1.0 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED TO-220 3 2 1 TO-220FP s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED )DESCRIPTION t(sThe PowerMESH™II is the evolution of the first cgeneration of MESH OVERLAY™. The layout reufinements introduced greatly improve the Ron*area dfigure of merit while keeping the device at the leadroing edge for what concerns swithing speed, gate Pcharge and ruggedness.