STB6N60M2 - N-channel Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STB6N60M2
Manufacturer	STMicroelectronics
File Size	560.01 KB
Description	N-channel Power MOSFET
Datasheet	STB6N60M2 Datasheet
Additional preview pages of the STB6N60M2 datasheet.

Product details

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Features

Order code STB6N60M2 STD6N60M2 VDS @ TJmax 650 V RDS(on) max 1.2 Ω ID 4.5 A.
Extremely low gate charge.
Excellent output capacitance (Coss) profile.
100% avalanche tested.
Zener-protected Figure 1. Internal schematic diagram , TAB.

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Published: Jul 7, 2015 |