STB6N60M2 Datasheet | STMicroelectronics

STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages - production data 3 1 D2 PAK 3 1 DPAK Features Order code STB6N60M2 STD6N60M2 VDS @ TJmax 650 V RDS(on) max 1.2 Ω ID 4.5 A - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected Figure 1. Internal schematic diagram , TAB Applications - Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics,...