STB6N65M2 Datasheet | STMicroelectronics

STB6N65M2, STD6N65M2 N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages - preliminary data Features 3 1 D2 PAK 3 1 DPAK Figure 1. Internal schematic diagram , TAB Order codes STB6N65M2 STD6N65M2 VDS RDS(on) max 650 V 1.35 Ω ID 4A - Extremely low gate charge - Excellent output capacitance (COSS) profile - 100% avalanche tested - Zener-protected Applications - Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them...