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STB6N62K3 - N-channel Power MOSFET

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • Order codes STB6N62K3 STD6N62K3 VDSS 620 V RDS(on) max. < 1.2 Ω ID Pw 5.5 A 90 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB6N62K3 STD6N62K3 N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3™ Power MOSFET in D²PAK, DPAK Features Order codes STB6N62K3 STD6N62K3 VDSS 620 V RDS(on) max. < 1.2 Ω ID Pw 5.5 A 90 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1.