STB6N80K5
STB6N80K5 is N-channel Power MOSFET manufactured by STMicroelectronics.
N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh K5 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
Features
Order code
800 V
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
RDS(on) max. 1.6 Ω
ID 4.5 A
- Switching applications
G(1)
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5
S(3) technology based on an innovative proprietary vertical structure. The result is a
AM01476v1_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and...
