Datasheet Summary
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Emitter Switched Bipolar Transistor ESBT® 1200 V
- 8 A
- 0.10 Ω
Preliminary Data
General Features
VCS(ON) 0.8 V
- IC 8A
RCS(ON) 0.10 W
High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO247-4L HP
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- Applications
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Internal schematic diagrams
Flyback / forward SMPS Buck-boost converter
Description
The STC08IE120HP is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based...