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STD11N60M2-EP - N-channel Power MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

Features

  • Order code VDS STD11N60M2-EP 600 V.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 0.595 Ω ID 7.5 A.

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Datasheet Details

Part number STD11N60M2-EP
Manufacturer STMicroelectronics
File Size 350.82 KB
Description N-channel Power MOSFET
Datasheet download datasheet STD11N60M2-EP Datasheet
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Full PDF Text Transcription

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STD11N60M2-EP Datasheet N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS STD11N60M2-EP 600 V • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected RDS(on) max. 0.595 Ω ID 7.5 A Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.
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