STD11N60M2-EP datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS STD11N60M2-EP 600 V
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* Very low turn-off switching losses
* 1.

Application

* Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced p.

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with v.

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