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STD11N60M2-EP Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

Product status STD11N60M2-EP Product summary Order code STD11N60M2-EP Marking 11N60M2EP Package DPAK Packing Tape and Reel DS10957 - Rev 3 - April 2018 For further infor

Overview

STD11N60M2-EP Datasheet N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3).

Key Features

  • Order code VDS STD11N60M2-EP 600 V.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 0.595 Ω ID 7.5 A.