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STD12N60DM2AG Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STD12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 mΩ typ.

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status STD12N60DM2AG Product summary Order code STD12N60DM2AG Marking 12N60DM2 Package DPAK Packing Tape and reel DS12209 - Rev 4 - November 2019 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code STD12N60DM2AG VDS @ TJmax 650 V RDS(on ) max. 430 mΩ ID 10 A.
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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