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STMicroelectronics Electronic Components Datasheet

STD12NE06 Datasheet

N-CHANNEL POWER MOSFET

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® STD12NE06
N - CHANNEL 60V - 0.08- 12A - IPAK/DPAK
SINGLE FEATURE SIZEPOWER MOSFET
TYPE
V DSS
RDS(on)
ID
STD12NE06
60 V
< 0.10
12 A
s TYPICAL RDS(on) = 0.08
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
3
1
IPAK
TO-251
(Suffix ”-1”)
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
VG S
ID
ID
IDM()
Ptot
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
Tstg Storage T emperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
March 1999
Va l u e
Unit
60 V
60 V
± 20
V
12 A
8A
48 A
35
0.23
W
W /o C
6 V/ns
-65 to 175
oC
175 oC
( 1) ISD 12 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
1/10


STMicroelectronics Electronic Components Datasheet

STD12NE06 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

STD12NE06
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 4.3 oC/W
Rthj-amb Thermal Resistance Junction-ambient
Max 100 oC/W
Rthc-sink Thermal Resistance Case-sink
T yp 1.5 oC/W
T l Maximum Lead Temperature F or Soldering Purpose
275 oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
12
45
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 100 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 6 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2
Typ.
3
0.08
Max.
4
0.10
Unit
V
12 A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =6 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ.
6
Max.
Unit
S
760 1000
100 140
30 45
pF
pF
pF
2/10


Part Number STD12NE06
Description N-CHANNEL POWER MOSFET
Maker ST Microelectronics
Total Page 10 Pages
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