STD12N60DM2AG

N-channel Power MOSFET

STMicroelectronics

STD12N60DM2AG Features

* Order code STD12N60DM2AG VDS @ TJmax 650 V RDS(on ) max. 430 mΩ ID 10 A

* AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

STD12N60DM2AG General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift.

STD12N60DM2AG Datasheet (554.52 KB)

STD12N60DM2AG Datasheet Preview — Preview of STD12N60DM2AG PDF

Datasheet Details

Part number:

STD12N60DM2AG

Manufacturer:

STMicroelectronics ↗

File Size:

554.52 KB

Description:

N-channel power mosfet.
STD12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) .

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STD12N60DM2AG N-channel Power MOSFET STMicroelectronics

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STD12N60DM2AG Features

STD12N60DM2AG General Description

Datasheet Details

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STD12N60DM2AG Distributor