STD13N65M2 Datasheet | STMicroelectronics

Features 23 1 DPAK Figure 1. Internal schematic diagram , TAB Order code STD13N65M2 VDS 650 V RDS(on) max ID 0.43 Ω 10 A - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected Applications - Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Order codes STD13N65M2 AM15572v1 Table 1. Device summary Marking Package 13N65M2 DPAK Packaging Tape and reel December 2014 This is information on a product in full production. Doc ID027324 Rev 1 1/16 .st. Contents Contents 1 Electrical ratings - - - - - - - - . . . . 3 2 Electrical characteristics - - -...